个人简介

胡晓龙，副研究员，博士生导师，广东省光电工程技术研究开发中心/广东省第三代半导体材料与器件工程实验室/广州市宽禁带半导体芯片及应用系统重点实验室，研究方向主要包括III-V族半导体光电器件、晶体管探测器等。作为项目负责人主持国家自然科学基金项目，广东省自然科学基金项目，广州市科技计划项目，技术开发与合作项目等。作为技术骨干参与国家高技术研究计划（863）重大项目，广东省重点领域研发计划项目，广东省前沿与关键技术创新项目，广州市产学研协同创新重大专项等。担任国家自然科学基金、广东省自然科学基金项目评审专家以及Adv. Fun. Mater., Appl. Phys. Lett., J. Alloys Comp., Opt. Lett., Opt. Express等期刊审稿人。目前在Appl. Surf. Sci., J. Alloys and Comp., Opt. Lett., Opt. Express, Chin. Phys. B, IEEE Photon. Technol. Lett.等期刊上发表论文40余篇，其中总被引用400余次，申请专利30余项，已授权20余项。

教育与工作经历

厦门大学物理系物理学学士

厦门大学物理系凝聚态物理硕士

厦门大学物理系微电子学与固体电子学博士

研究工作

申请人一直致力于III-V族半导体光电材料与器件领域的研究工作，在半导体材料生长与表征，器件制备及测试等方面积累了丰富的第一线经验。主要工作业绩包括：

1）通过在高铟组分III-族氮化物量子阱层下方引入多层超晶格结构实现对应力应变的调控，降低了器件非辐射复合的同时提升空穴注入效率，结合低阻掺铝ITO电流扩展层与COB封装工艺使得器件工作时的流明效率超过260流明瓦，该成果被同行评为是c面蓝宝石衬底上具有最杰出性能的氮化镓基绿光器件。

2）提出一种双层金属光栅结构并将其应用于近红外热电子探测器上，实现近完美吸收的同时抑制了薄膜层中的间隙等离激元，使得器件上下吸收比高达76：1，器件的零偏响应度大幅提升。

3）开发二次转移衬底技术，并利用GaN氮极性面的CMP技术，纳米级平整表面的薄ITO电流扩展层等实现了Q值高达3500的电注入氮化物基谐振腔发光二极管，达到国际先进水平，并获Compound Semiconductor杂志高度评价，在此基础上在大陆实现了首个电注入氮化物垂直腔面发射激光器。

研究资助：

主持国家自然科学基金项目，广东省自然科学基金项目，广州市科技计划项目，技术开发与合作项目等。作为技术骨干参与国家高技术研究计划（863）重大项目，广东省重点领域研发计划项目，广东省前沿与关键技术创新项目，广州市产学研协同创新重大专项等 。

代表性成果：

1. Wen-jie Liu, … Xiao-long Hu*,Excitation of out-of-plane lattice plasmons in dislocated nanostructures through near-field coupling, Optics Letters, 2023, 48:3271

2. Wen-jie Liu,...Xiao-long Hu* et al., Facile Preparation of Au–Ag Composite Nanostructure for High-Sensitive and Uniform Surface-Enhanced Raman Spectroscopy, Photonics, 2023, 10:354.

3. Xiao-long Hu, Hai-lin Wu et al., High-responsivity dual-frequency hot-electron photodetectors with magnetic polaritons beneath metal grating strips, Journal of Physics D: Applied Physics, 2023, 56:125101.

4. Xiao-long Hu, Fen Li et al., High-performance plasmonic polymer modulators through mode hybridization and electro-thermomechanical effects, Optics Letters, 2023, 48:964.

5. Xiao-long Hu, Jian-kun Jiang et al., Low-loss and broadband cascaded SiN RGB coupler with dual-mode interference, Applied Optics, 2023, 62:944.

6. Wen-jie Liu, ...Xiao-long Hu* et al., Tunable plasmonic modulator with high-modulation-depth through electrical control, Optics Communications, 2023, 528:129009.

7. Xiao-long Hu, Xu Liang et al., Enhanced Light Extraction Efficiency and Modulation Bandwidth of Deep-Ultraviolet Light-Emitting Diodes with Al Nanospheres, Crystals, 2022, 12:289.

8. Wen-jie Liu, ...Xiao-long Hu* et al., Efficient unidirectional SPP launcher: coupling the SPP to a smooth surface for propagation, Optics Letters, 2022, 47:621.

9. Xiao-long Hu, Fen Li et al., Suppression of gap plasmon resonance for high-responsivity MIM near-infrared hot-electron photodetectors, Optics Letters, 2022, 47:42.

10. Wen-jie Liu, ...Xiao-long Hu*et al., Integrated plasmonic biosensor on a vertical cavity surface emitting laser platform, Optics Express, 2021, 22:40643.

11. Fu-an Xiao, ... Xiao-long Hu*, Improved Wave Function Overlap and Carrier Confinement of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes with Graded Composition Multiple Quantum Wells, Phys. Status Solidi A, 2021, 2000779.

12. Y.-D. Zheng, … X.-L. Hu*, Purcell effect and light extraction of Tamm-plasmon-cavity green light-emitting diodes, Optics Express, 2019, 27:30852.

13. X. L. Hu, F. A. Xiao et al., High-luminous efficacy green light-emitting diodes with InGaN/GaN quasi-superlattice interlayer and Al-doped indium tin oxide film, Journal of Alloys and Compounds, 2019, 794:137.

14. W. J. Liu, X. L. Hu* et al., Performance enhancement of GaN-based near-ultraviolet flipchip light-emitting diodes with two-step insulating layer scheme on patterned sapphire substrate, Journal of Materials Science: Materials in Electronics, 2019, 30:3013-3018    

15. X. L. Hu, R. L. Wen et al., III-nitride ultraviolet, blue and green LEDs with SiO2 photonic crystals fabricated by UV-nanoimprint lithography Materials Science in Semiconductor Processing, 2018, 79:61.

16. W. J. Liu, X. L. Hu*, et al., Optical and thermal performance of nitride-based thin-film flip-chip light-emitting diodes. Journal of Materials Science: Materials in Electronics, 2018, 29:19825-19829.

17. R. L. Wen, X. L. Hu, et al., Fabrication and Characterization of High-Efficiency green InGaN Light-Emitting Diodes With Metal-Doped ITO Layer, IEEE Transactions on Electron devices, 2018, 65:4334.

18. W. J. Liu, X. L. Hu, et al., Low-loss integrated electrical surface plasmon source with ultra-smooth metal film fabricated by polymethyl methacrylate ‘bond and peel’ method, Nanotechnology, 2018, 29:24LT01.

联系方式

Email:scxlhu@scut.edu.cn